The SST12LP14A is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP14A can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 29 dB gain with 23% power-added efficiency @ POUT = 22 dBm for 802.11g and 25% po.
• High Gain:
– Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:
– >28 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4
– Meets 802.11g OFDM ACPR requirement up to 23 dBm
– ~4% added EVM up to 21 dBm for 54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 23 dBm High power-added efficiency/Low operating current for both 802.11g/b applications
– ~23%/210 mA @ POUT = 22 dBm for 802.11g
– ~25%/240 mA @ POUT = 23 dBm for 802.11b Single-pin low IREF power-up/down control
– IREF <2 mA Low idle current
– ~70 mA ICQ High-sp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST12LP14 |
SST |
2.4 GHz Power Amplifier | |
2 | SST12LP14C |
Silicon Storage Technology |
High-Gain Power Amplifier | |
3 | SST12LP10 |
SST |
High-Linearity Power Amplifier | |
4 | SST12LP15 |
SST |
High-Gain Power Amplifier | |
5 | SST12LP15A |
SST |
High-Power and High-Gain Power Amplifier | |
6 | SST12LP15B |
Microchip |
256 QAM Power Amplifier | |
7 | SST12LP17E |
Microchip |
High-Gain Power Amplifier Module | |
8 | SST12LP19E |
Microchip |
High-Efficiency Power Amplifier | |
9 | SST12LP00 |
SST |
Power Amplifier | |
10 | SST12LP07 |
Silicon Storage Technology |
High-Gain Power Amplifier | |
11 | SST12LP07A |
Silicon Storage Technology |
High-Gain Power Amplifier | |
12 | SST12LP08 |
Silicon Storage Technology |
High-Gain Power Amplifier |