SST12LP07 - Silicon Storage Technology

SST12LP07 High-Gain Power Amplifier

2.4 GHz High-Power, High-Gain Power Amplifier A Microchip Technology Company SST12LP07 Data Sheet The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, the SST12LP07 has excel.

Features

easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin, and is offered in a 16-contact VQFN package. Features
• High Gain:
  – Typically 29 dB gain across 2.4
  –2.5 GHz over temperature 0°C to +85°C
• High linear output power:
  – >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5
  – Meets 802.11g OFDM ACPR requirement up to 22 dBm
  – ~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g signal
  – Meets 802..