A • Initial release of Product Brief Date Jan 2012 ISBN:978-1-61341-997-7 © 2012 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademar.
• Input/output ports are matched to 50 internally and DC decoupled.
• Packages available
– 20-contact UQFN
– 3mm x 3mm x 0.55mm
• All non-Pb (lead-free) devices are RoHS compliant
Transmitter Chain:
• High gain:
– Typically 28 dB gain across 2.4
–2.5 GHz over temperature -20°C to +85°C for Transmitter.
• High linear output power (at 3.3V):
– Meets 802.11g OFDM ACPR requirement up to 21 dBm
– 3% added EVM up to 19 dBm for 54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 22 dBm
• High power-added efficiency/Low operating current for 802.11b/g/n applications
– ~25% @ POUT = 22 dBm fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST12LF02 |
Microchip |
High-Efficiency FEM | |
2 | SST12LF09 |
Microchip |
WLAN Front-End Module | |
3 | SST12LN01 |
Microchip |
2.4-2.5 GHz WLAN Low-Noise Amplifier | |
4 | SST12LP00 |
SST |
Power Amplifier | |
5 | SST12LP07 |
Silicon Storage Technology |
High-Gain Power Amplifier | |
6 | SST12LP07A |
Silicon Storage Technology |
High-Gain Power Amplifier | |
7 | SST12LP08 |
Silicon Storage Technology |
High-Gain Power Amplifier | |
8 | SST12LP10 |
SST |
High-Linearity Power Amplifier | |
9 | SST12LP14 |
SST |
2.4 GHz Power Amplifier | |
10 | SST12LP14A |
SST |
High-Gain Power Amplifier | |
11 | SST12LP14C |
Silicon Storage Technology |
High-Gain Power Amplifier | |
12 | SST12LP15 |
SST |
High-Gain Power Amplifier |