These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
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• 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6)
D
G G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
SSP7N60B 600 7.0 4.4 28 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
SSS7N60B 7.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP7N60A |
Samsung Electronics |
Advanced Power MOSFET | |
2 | SSP7N80A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
3 | SSP70N10A |
Samsung Electronics |
Advanced Power MOSFET | |
4 | SSP70N10A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
5 | SSP7431P |
SeCoS |
P-Channel MOSFET | |
6 | SSP7438N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
7 | SSP7440N |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
8 | SSP7460N |
SeCoS |
N-Channel MOSFET | |
9 | SSP7466N |
SeCoS |
N-Channel MOSFET | |
10 | SSP7468N |
SeCoS |
N-Channel MOSFET | |
11 | SSP7492N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
12 | SSP-T |
ETC |
Surface Mount Quartz Crystal |