These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES .
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology.
PACKAGE INFORMATION
Package SOP-8PP MPQ 3K Leader Size 13 inch
REF. A B C D E F G L Millimeter Min. Max. 0.85 1.00 5.3 BSC. 0.15 0.25 3.8 BCS. 6.05 BCS. 0.03 0.30 4.35 BCS. 0.40 0.70 REF. θ b c d e f g Millimeter Min. Max. 0° 10° 5.2 BCS 0.30 0.50 1.27BSC 5.55 BCS. 0.10 0.40 1.2 BCS.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP7431P |
SeCoS |
P-Channel MOSFET | |
2 | SSP7438N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
3 | SSP7440N |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
4 | SSP7460N |
SeCoS |
N-Channel MOSFET | |
5 | SSP7466N |
SeCoS |
N-Channel MOSFET | |
6 | SSP7468N |
SeCoS |
N-Channel MOSFET | |
7 | SSP70N10A |
Samsung Electronics |
Advanced Power MOSFET | |
8 | SSP70N10A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
9 | SSP7N60A |
Samsung Electronics |
Advanced Power MOSFET | |
10 | SSP7N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
11 | SSP7N80A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
12 | SSP-T |
ETC |
Surface Mount Quartz Crystal |