These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8PP FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance tren.
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8PP saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size 13 inch
S S S G
REF.
Millimeter Min. Max.
REF.
Millimeter Min. Max.
A 0.85 1.00 θ 0° 10°
B 5.3 BSC. b 5.2 BCS
C 0.15 0.25 c 0.30 0.50
D 3.8 BCS. d 1.27BSC
D E 6.05.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP7438N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
2 | SSP7440N |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
3 | SSP7460N |
SeCoS |
N-Channel MOSFET | |
4 | SSP7466N |
SeCoS |
N-Channel MOSFET | |
5 | SSP7468N |
SeCoS |
N-Channel MOSFET | |
6 | SSP7492N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
7 | SSP70N10A |
Samsung Electronics |
Advanced Power MOSFET | |
8 | SSP70N10A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
9 | SSP7N60A |
Samsung Electronics |
Advanced Power MOSFET | |
10 | SSP7N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
11 | SSP7N80A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
12 | SSP-T |
ETC |
Surface Mount Quartz Crystal |