SSP7466N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SOP-8PP FEATURES Low RDS(ON) trench technology Low thermal resistance Fast switching speed APPLICATIONS White LED boost converter Automotive systems Industrial DC/DC conversion circuits PACKAGE INFORMATI.
Low RDS(ON) trench technology Low thermal resistance Fast switching speed APPLICATIONS White LED boost converter Automotive systems Industrial DC/DC conversion circuits PACKAGE INFORMATION Package MPQ SOP-8PP 3K Leader Size 13 inch REF. Millimeter REF. Millimeter S D Min. Max. Min. Max. A 0.80 1.00 θ 0° 10° S D B 5.3 BSC. b 5.2 BCS C 0.15 0.25 c 0.20 0.50 S D D 3.8 BCS. d 1.27BSC E 6.05 BCS. e 5.65 BCS. F 0.03 0.30 f 0.10 0.40 G D G 4.35 BCS. g 1.3 BCS. L 0.40 0.70 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage G.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP7460N |
SeCoS |
N-Channel MOSFET | |
2 | SSP7468N |
SeCoS |
N-Channel MOSFET | |
3 | SSP7431P |
SeCoS |
P-Channel MOSFET | |
4 | SSP7438N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
5 | SSP7440N |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
6 | SSP7492N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
7 | SSP70N10A |
Samsung Electronics |
Advanced Power MOSFET | |
8 | SSP70N10A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
9 | SSP7N60A |
Samsung Electronics |
Advanced Power MOSFET | |
10 | SSP7N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
11 | SSP7N80A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
12 | SSP-T |
ETC |
Surface Mount Quartz Crystal |