These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on.
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ SOP-8PP 3K Leader Size 13 inch SOP-8PP ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 ID IDM IS Power Dissipation 1 TA=25°C TA=70°C PD Operating Junction and Stor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP7460N |
SeCoS |
N-Channel MOSFET | |
2 | SSP7466N |
SeCoS |
N-Channel MOSFET | |
3 | SSP7431P |
SeCoS |
P-Channel MOSFET | |
4 | SSP7438N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
5 | SSP7440N |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
6 | SSP7492N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
7 | SSP70N10A |
Samsung Electronics |
Advanced Power MOSFET | |
8 | SSP70N10A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
9 | SSP7N60A |
Samsung Electronics |
Advanced Power MOSFET | |
10 | SSP7N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
11 | SSP7N80A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
12 | SSP-T |
ETC |
Surface Mount Quartz Crystal |