Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitiv.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP4N60 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET | |
2 | SSP4N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
3 | SSP4N55 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET | |
4 | SSP4N70 |
Samsung Electronics |
(SSP4N70 / SSP4N80) N-Channel Power MOSFETs | |
5 | SSP4N80 |
Samsung Electronics |
(SSP4N70 / SSP4N80) N-Channel Power MOSFETs | |
6 | SSP4N80A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
7 | SSP4N80AS |
Fairchild Semiconductor |
Advanced Power MOSFET | |
8 | SSP45N10 |
SeCoS |
N-Channel Enhancement Mode MOSFET | |
9 | SSP45N20A |
Fairchild Semiconductor |
advanced power MOSFET | |
10 | SSP45N20B |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
11 | SSP-T |
ETC |
Surface Mount Quartz Crystal | |
12 | SSP-T5 |
ETC |
Surface Mount Quartz Crystal |