SSP45N20A - Fairchild Semiconductor

SSP45N20A advanced power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSP45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 35 A TO-220 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Ab.

Features

Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSP45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 35 A TO-220 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avala.