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SSP4N60AS |
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| Part Number | SSP4N60AS |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) ... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.)
SSP4N60AS
BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitiv... |
| Document |
 SSP4N60AS Data Sheet
PDF 253.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSP4N60AS |
Samsung Electronics |
Advanced Power MOFET |
|
| 2 | SSP4N60 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET |
|
| 3 | SSP4N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 4 | SSP4N55 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET |
|
| 5 | SSP4N70 |
Samsung Electronics |
(SSP4N70 / SSP4N80) N-Channel Power MOSFETs |
|