The SSP45N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications .The SSP45N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. FEATURES Simple Drive Requirement Small P.
Simple Drive Requirement Small Package Outline MARKING 45N10 = Date Code SOP-8PP PACKAGE INFORMATION Package MPQ SOP-8PP 3K Leader Size 13 inch TOP VIEW REF. A B C D E F G L Millimeter Min. Max. 0.80 1.00 5.3 BSC. 0.15 0.25 3.8 BCS. 6.05 BCS. 0.03 0.30 4.35 BCS. 0.40 0.70 REF. θ b c d e f g Millimeter Min. Max. 0° 10° 5.2 BCS 0.20 0.50 1.27BSC 5.65 BCS. 0.10 0.40 1.3 BCS. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 , VGS@10V Pulsed Drain Current 2 Power Dissipat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP45N20A |
Fairchild Semiconductor |
advanced power MOSFET | |
2 | SSP45N20B |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
3 | SSP4N55 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET | |
4 | SSP4N60 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET | |
5 | SSP4N60AS |
Fairchild Semiconductor |
Advanced Power MOFET | |
6 | SSP4N60AS |
Samsung Electronics |
Advanced Power MOFET | |
7 | SSP4N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
8 | SSP4N70 |
Samsung Electronics |
(SSP4N70 / SSP4N80) N-Channel Power MOSFETs | |
9 | SSP4N80 |
Samsung Electronics |
(SSP4N70 / SSP4N80) N-Channel Power MOSFETs | |
10 | SSP4N80A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSP4N80AS |
Fairchild Semiconductor |
Advanced Power MOSFET | |
12 | SSP-T |
ETC |
Surface Mount Quartz Crystal |