SSP4N80AS - Fairchild Semiconductor

SSP4N80AS Advanced Power MOSFET

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.) SSP4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 4.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Abso.

Features

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.) SSP4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 4.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive .