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SSP45N20A |
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| Part Number | SSP45N20A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSP45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 35 A TO-220 Lower Input Capacitance Improve... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology
www.DataSheet4U.com
SSP45N20A
BVDSS = 200 V RDS(on) = 0.065 Ω ID = 35 A
TO-220
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 Ω (Typ.)
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avala... |
| Document |
 SSP45N20A Data Sheet
PDF 277.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSP45N20B |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 2 | SSP45N10 |
SeCoS |
N-Channel Enhancement Mode MOSFET |
|
| 3 | SSP4N55 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET |
|
| 4 | SSP4N60 |
Samsung Electronics |
(SSP4N55 / SSP4N60) N-Channel Power MOSFET |
|
| 5 | SSP4N60AS |
Fairchild Semiconductor |
Advanced Power MOFET |
|