SSM6K407TU - Toshiba Semiconductor

SSM6K407TU Silicon N-Channel MOSFET

SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K407TU ○ DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 2.0±0.1 1.3±0.1 0.65 0.65 z 4V drive z Low ON-resistance : Ron = 440mΩ (max) (@VGS = 4 V) : Ron = 300mΩ (max) (@VGS = 10 V) 1 6 2 5 3 4 0.166±0.05 0.7±0.05 Absolute.

Features

s (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Start of commercial production 2008-01 1 2014-03-01 Electrical Characteristics (Ta = 25℃) SSM6K407TU Characteristic Gate leakage current Drain cutoff current Drain
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