SSM6K202FE - Toshiba Semiconductor

SSM6K202FE Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM6K202FE 1. Applications • High-Speed Switching • Power Management Switches 2. Features (1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit ES6 SSM6K202FE 1: Drain 2: Drain 3: Gat.

Features

(1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit ES6 SSM6K202FE 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2006-03 2022-02-03 Rev.1.0 SSM6K202FE 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±12 V Drain cur.