SSM6K07FU - Toshiba Semiconductor

SSM6K07FU DC-DC Converters High Speed Switching Applications

www.DataSheet4U.com SSM6K07FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K07FU DC-DC Converters High Speed Switching Applications · · · Small package Low on resistance : Ron = 130 mΩ max (@VGS = 10 V) : Ron = 220 mΩ max (@VGS = 4 V) Low input capacitance : Ciss = 102 pF typ. : Crss = 22 pF typ. Unit: mm Maximum Ratings (Ta = 25°C) Char.

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c clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2003-03-28 SSM6K07FU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff Test Condition VGS = ±16 V, VDS = 0 ID = .