SSM6K203FE - Toshiba Semiconductor

SSM6K203FE Silicon N-Channel MOSFET

SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance: Ron = 153 mΩ (max) (@VGS = 1.5V) Ron = 106 mΩ (max) (@VGS = 1.8V) Ron = 76 mΩ (max) (@VGS = 2.5V) Ron = 61 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 2.

Features

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source ES6 JEDEC ― JEITA TOSHIBA ― 2-2N1A Weight: 3 mg (typ.) Characteristic Drain
  –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfe.