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MOSFETs Silicon N-Channel MOS SSM6K405TU 1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 307 mΩ (max) (@VGS = 1.5 V) RDS(ON) = 214 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 164 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit U.
(1) 1.5-V drive (2) Low drain-source on-resistance
: RDS(ON) = 307 mΩ (max) (@VGS = 1.5 V) RDS(ON) = 214 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 164 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)
3. Packaging and Internal Circuit
UF6
SSM6K405TU
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain
©2021-2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2007-10
2022-12-01 Rev.1.0
SSM6K405TU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
�)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltag.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSM6K403TU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | SSM6K404TU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | SSM6K406TU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | SSM6K407TU |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | SSM6K411TU |
Toshiba Semiconductor |
MOSFET |
|
| 6 | SSM6K06FU |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 7 | SSM6K07FU |
Toshiba Semiconductor |
DC-DC Converters High Speed Switching Applications |
|
| 8 | SSM6K08FU |
Toshiba Semiconductor |
CategoryTOSHIBA Field Effect Transistor |
|
| 9 | SSM6K201FE |
Toshiba Semiconductor |
Power Management Switch Applications |
|
| 10 | SSM6K202FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | SSM6K203FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 12 | SSM6K204FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|