SSM6K208FE - Toshiba Semiconductor

SSM6K208FE Silicon N-Channel MOSFET

SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm • 1.8V drive • Low ON-resistance: Ron = 296 mΩ (max) (@VGS = 1.8 V) Ron = 177 mΩ (max) (@VGS = 2.5 V) Ron = 133 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic .

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emperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm2 ) Start of commercial production 2008-01 1 2014-03-01 SSM6K208FE Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage.