Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MOSFETs Silicon N-Channel MOS SSM6K217FE 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 155 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 165 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 170 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 190 mΩ (typ.) .
(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 155 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 165 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 170 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 190 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 230 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A) 3. Packaging and Pin Assignment ES6 SSM6K217FE 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain Start of commercial production 2014-02 1 2014-03-12 Rev.1.0 SSM6K217FE 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSM6K210FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | SSM6K211FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | SSM6K201FE |
Toshiba Semiconductor |
Power Management Switch Applications |
|
| 4 | SSM6K202FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | SSM6K203FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 6 | SSM6K204FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | SSM6K208FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 8 | SSM6K209FE |
Toshiba Semiconductor |
MOSFET |
|
| 9 | SSM6K22FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 10 | SSM6K24FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | SSM6K25FE |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 12 | SSM6K06FU |
Toshiba Semiconductor |
High Speed Switching Applications |
|