SSM3K339R - Toshiba

SSM3K339R Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM3K339R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 180 mΩ (typ.) (.

Features

(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A) 3. Packaging and Pin Assignment SOT-23F SSM3K339R 1: Gate 2: Source 3: Drain Start of commercial production 2014-02 1 2014-02-21 Rev.1.0 SSM3K339R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source.