SSM3K335R - Toshiba Semiconductor

SSM3K335R Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM3K335R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Config.

Features

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Configuration SSM3K335R 1.Gate 2.Source 3.Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K335R,LF SSM3K335R,LXGF
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