SSM3K336R - Toshiba Semiconductor

SSM3K336R Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3K336R 1. Gate 2. Source 3. Drain ©2021 1 Toshiba Elect.

Features

(1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3K336R 1. Gate 2. Source 3. Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2021-09-16 Rev.3.0 SSM3K336R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) (Note 1) ID 3 A Drain current (pulsed) (Not.