The SSESDL05-C is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited f.
Small body outline dimensions
QUALIFIED MAX REFLOW TEMPERATURE:260°C
Device Meets MSL 1 Requirements
LEAD FINISH:100% Matte Sn (Tin)
PACKAGE INFORMATION
Package
MPQ
SOD-923
8K
Leader Size 7 inch
SOD-923
A B
D CF
E
REF.
A B C
Millimeter Min. Max.
0.95 1.05 0.55 0.65
0.34 0.43
REF.
D E F
Millimeter Min. Max.
0.75 0.85 0.15 0.25
0.07 0.17
MARK CODE
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating
Symbol
Value
Units
Total Power Dissipation on FR-5 Board @ TA=25°C 1
PD 150 mW
Lead Solder Temperature -Maximum (10 second Duration)
TL
260 °C
Junct.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSESD03 |
SeCoS |
Transient Voltage Suppressors | |
2 | SSESD03C |
SeCoS |
Transient Voltage Suppressors | |
3 | SSESD05 |
SeCoS |
Transient Voltage Suppressors | |
4 | SSESD05C |
SeCoS |
Transient Voltage Suppressors | |
5 | SSESD11B |
ON Semiconductor |
Transient Voltage Suppressors | |
6 | SSE04N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
7 | SSE04N65SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSE07N80SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
9 | SSE08N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
10 | SSE102N10SV-C |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
11 | SSE104N10-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
12 | SSE105P03-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |