The SSESD03C is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and.
z z z z z z z z Small body outline dimensions Low body height Peak power up to 150 Watts @ 8 x 20 μs pulse Low leakage current Response time is typically < 1 ns ESD rating of class 3 (> 16 kV) per Human Body Model IEC61000−4−2 Level 4 ESD Protection IEC61000−4−4 Level 4 EFT Protection www.DataSheet.co.kr 0.55~0.65 0.15~0.25 0.75~0.85 Dimensions in millimeters Bi-direction ABSOLUTE RATINGS (Tamb = 25°C ) Rating Peak Pulse Power (tp = 8/20 μs) Maximum lead temperature for soldering during 10s Storage Temperature Range Operating Temperature Range Maximum junction temperature IEC61000-4-2 (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSESD03 |
SeCoS |
Transient Voltage Suppressors | |
2 | SSESD05 |
SeCoS |
Transient Voltage Suppressors | |
3 | SSESD05C |
SeCoS |
Transient Voltage Suppressors | |
4 | SSESD11B |
ON Semiconductor |
Transient Voltage Suppressors | |
5 | SSESDL05-C |
SeCoS |
Ultra-Low Capacitance ESD Protection | |
6 | SSE04N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
7 | SSE04N65SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSE07N80SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
9 | SSE08N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
10 | SSE102N10SV-C |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
11 | SSE104N10-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
12 | SSE105P03-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |