The SSESD05 is designed to protect voltage-sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board spac.
z 0.55~0.65 z z z z z z z Small Body Outline Dimensions: 0.039” x 0.024”(1.0 mm x 0.60 mm) Low Body Height: 0.017” (0.43 mm) Max Stand−off Voltage: 5 V Low Leakage Current Response Time is typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000−4−2 Level 4 ESD Protection These are Pb−Free Devices 0.15~0.25 0.75~0.85 Dimensions in millimeters z The marking band indicates cathode. www.DataSheet.co.kr Uni-direction ABSOLUTE RATINGS (Tamb = 25°C ) Rating IEC 61000-4-2 (ESD) Air contact Contact discharge ESD voltage Per human body model Total power dissipation on F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSESD03 |
SeCoS |
Transient Voltage Suppressors | |
2 | SSESD03C |
SeCoS |
Transient Voltage Suppressors | |
3 | SSESD05C |
SeCoS |
Transient Voltage Suppressors | |
4 | SSESD11B |
ON Semiconductor |
Transient Voltage Suppressors | |
5 | SSESDL05-C |
SeCoS |
Ultra-Low Capacitance ESD Protection | |
6 | SSE04N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
7 | SSE04N65SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSE07N80SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
9 | SSE08N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
10 | SSE102N10SV-C |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
11 | SSE104N10-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
12 | SSE105P03-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |