SSESD11B - ON Semiconductor

SSESD11B Transient Voltage Suppressors

of survivability specs. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 1 1 Publication Order Number: SSESD11B/D SSESD11B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage .

Features

• Low Capacitance 12 pF
• Low Clamping Voltage
• Small Body Outline Dimensions: 0.60 mm x 0.30 mm
• Low Body Height: 0.3 mm
• Stand−off Voltage: 5.0 V
• Low Leakage
• Response Time is < 1 ns
• IEC61000−4−2 Level 4 ESD Protection
• IEC61000−4−4 Level 4 EFT Protection
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 3 Requirements MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) Symbol Contact Air Value ±15 ±15 Unit kV Total Power Dissipation on FR−5 Board (Note 1) @.