The SSE102N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE102N10SV-C meet the RoHS and Green Product requirement with full function reliability approved. TO-220 FEATURES Shielded Gate Trench Technology Hig.
Shielded Gate Trench Technology
High Speed Power Switching
Super Low Gate Charge
Green Device Available
MARKING
102N10SV
=Date Code
ORDER INFORMATION
1
Gate
Part Number
Type
SSE102N10SV-C Lead (Pb)-free and Halogen-free
2
Drain
3
Source
REF.
A B C D E F G
Millimeter
Min. Max.
9.70 10.60
14.22 16.5
2.54. 3.40
12.7 14.7
1.17 1.78
0.4
1.00
3.60 4.82
REF.
H I J K L M
Millimeter
Min. Max.
2.54 TYP.
2.03 2.92
2.70 3.30
0.33 0.65
5.5
7
1.20 1.40
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Ga.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSE104N10-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SSE105P03-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
3 | SSE110N03-03P |
SeCoS |
N-Channel Enhancement Mode MOSFET | |
4 | SSE12N65SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
5 | SSE133N12S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
6 | SSE14N65H-C |
SeCoS |
N-Channel Super Junction Power MOSFET | |
7 | SSE16020 |
Sanken |
Hybrid Voltage Regulator Module | |
8 | SSE166N10SV-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
9 | SSE190N04S-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
10 | SSE04N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
11 | SSE04N65SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
12 | SSE07N80SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |