SSD25N10 - SeCoS

SSD25N10 N-Ch Enhancement Mode Power MOSFET

The SSD25N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. The SSD25N10 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low .

Features

Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 25N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K 1 Gate Leader Size 13 inch 2 Drain 3 Source TO-252(D-Pack) A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.41 0.9 N 1.55 Typ. E6 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-S.