SSC8P22AN3 - AFSEMI

SSC8P22AN3 N-Channel Enhancement Mode MOSFET

SSC8P22AN3 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density and a Media Power PNP transistor . The tiny and thin outline saves PCB consumption.  Package Information 1:Collector 2:Emitter 3:Base 4:Drain 5:Gate 6：Source 7：Collector 8：Collector 9：Collector 10：Drain DFN3X2X0.75 SSC-1V0 Symbol A A1 A3 D E D1 E1 D2.

Features

PNP Transistor VCE VBE -40V -6V VCESATMAX -200mV IC -3A
 Applications
 Li Battery Charging
 Pin configuration
 General Description SSC8P22AN3 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density and a Media Power PNP transistor . The tiny and thin outline saves PCB consumption.
 Package Information 1:Collector 2:Emitter 3:Base 4:Drain 5:Gate 6：Source 7：Collector 8：Collector 9：Collector 10：Drain DFN3X2X0.75 SSC-1V0 Symbol A A1 A3 D E D1 E1 D2 b e k L http://www.afsemi.com Dimensions in millimeter MIN. MAX. 0.700 0.800 0.000 0.050 0.2.