SPP08P06PH - Infineon Technologies

SPP08P06PH Power-Transistor

SPP08P06P H SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V Drain-source on-state resistance RDS(on) 0.3 W Continuous drain current ID -8.8 A · 175°C operating temperature • Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21.

Features

Product Summary
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated Drain source voltage VDS -60 V Drain-source on-state resistance RDS(on) 0.3 W Continuous drain current ID -8.8 A
· 175°C operating temperature
• Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPP08P06P H Package PG-TO220-3 Pin 1 PIN 2/4 PIN 3 GDS Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current TC = 25 °C ID puls Avalanche energ.