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Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
VDS RDS(on) ID
-60 0.3 -8.8
V
W
·
·
·
·
A
Type SPP08P06P SPB08P06P
Package
Ordering Code
Pin 1 G
PIN 2/4 D
PIN 3 S
P-TO220-3-1 Q67040-S4729 P-TO263-3-2 Q67040-S4233
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
Value -8.8 -6.2
Unit A
ID
T C = 25 °C T C = 100 °C
Pulsed drain current
ID puls EAS EAR
dv/dt
-35.2 70 4.2 6 kV/µs mJ
T C = 25 °C
Av.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP08P06PH |
Infineon Technologies |
Power-Transistor | |
2 | SPP08N50C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
3 | SPP08N50C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPP08N80C3 |
Infineon Technologies |
Power Transistor | |
5 | SPP08N80C3 |
INCHANGE |
N-Channel MOSFET | |
6 | SPP02N60C3 |
Infineon Technologies |
Power Transistor | |
7 | SPP02N60C3 |
INCHANGE |
N-Channel MOSFET | |
8 | SPP02N60S5 |
Infineon Technologies |
Power Transistor | |
9 | SPP02N60S5 |
INCHANGE |
N-Channel MOSFET | |
10 | SPP02N80C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
11 | SPP03N60C3 |
INCHANGE |
N-Channel MOSFET | |
12 | SPP03N60C3 |
Infineon Technologies |
Power Transistor |