SPP02N60S5 - Infineon Technologies

SPP02N60S5 Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP02N60S5 VDS RDS(on) ID 600 V 3 Ω 1.8 A PG-TO220 2 P-TO220-3-1 23 1 Type SPP02N60S5 Package PG-TO220 Ordering Code Q67040-S4181 Ma.

Features

ngs Parameter Drain Source voltage slope VDS = 480 V, ID = 1.8 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3) Symbol RthJC RthJA RthJA Tsold Values Unit min. typ. max. - - 5 K/W - - 62 - - 62 - 35 - - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values .