Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 104 Tj Max. Operating Junction Temperature .
·Static drain-source on-resistance:
RDS(on) ≤0.65Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·High peak current capability
·Ultra low gate charge
·Ultra low effective capacitances
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
8
IDM
Drain Current-Single Pulsed
24
PD
Total Dissipation @TC=25℃
104
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperat.
SPP08N80C3 - Infineon Technologies
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak curren.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP08N50C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPP08N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPP08P06P |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 4 | SPP08P06PH |
Infineon Technologies |
Power-Transistor |
|
| 5 | SPP02N60C3 |
Infineon Technologies |
Power Transistor |
|
| 6 | SPP02N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | SPP02N60S5 |
Infineon Technologies |
Power Transistor |
|
| 8 | SPP02N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | SPP02N80C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 10 | SPP03N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | SPP03N60C3 |
Infineon Technologies |
Power Transistor |
|
| 12 | SPP03N60S5 |
Infineon Technologies |
Power Transistor |
|