and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
erating and storage temperature -55...+150 Page 1 2003-10-14 www.DataSheet4U.com Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 640 V, I D = 2 A, Tj = 125 °C SPP02N80C3 SPA02N80C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T j=25°C unless otherwise specified Symbol Conditions.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP02N60C3 |
Infineon Technologies |
Power Transistor | |
2 | SPP02N60C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPP02N60S5 |
Infineon Technologies |
Power Transistor | |
4 | SPP02N60S5 |
INCHANGE |
N-Channel MOSFET | |
5 | SPP03N60C3 |
INCHANGE |
N-Channel MOSFET | |
6 | SPP03N60C3 |
Infineon Technologies |
Power Transistor | |
7 | SPP03N60S5 |
Infineon Technologies |
Power Transistor | |
8 | SPP03N60S5 |
INCHANGE |
N-Channel MOSFET | |
9 | SPP04N50C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
10 | SPP04N50C3 |
INCHANGE |
N-Channel MOSFET | |
11 | SPP04N60C2 |
Infineon |
Cool MOS Power Transistor | |
12 | SPP04N60C3 |
INCHANGE |
TO-251 N-Channel MOSFET |