SPD31N05 SPU31N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V 55 V ID 31 A 31 A RDS(on) 0.04 Ω 0.04 Ω Package Ordering Code SPD31N05 SPU31N05 P-TO252 P-TO251 Q67040 - S4121 - A2 Q67040 - S4113 - A2 Maximum Ratings Parameter Symbol .
al resistance, junction - case Thermal resistance, junction - ambient (PCB mount)
*
* Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA RthJA
-55 ... + 175 -55 ... + 175
°C
≤2 ≤ 50 ≤ 100
55 / 175 / 56
K/W
*
* when mounted on 1 " square PCB ( FR4 );for recommended footprint
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 50 µA
V GS(.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD3126 |
SSDI |
Standard / Fast / UltraFast Recovery Rectifier | |
2 | SPD3126SMS |
SSDI |
Standard/ Fast / UltraFast Recovery Rectifier | |
3 | SPD31515 |
STC |
Ultra Fast Rectifiers | |
4 | SPD30N03 |
Infineon Technologies |
SIPMOS Power Transistor | |
5 | SPD30N03L |
Siemens Semiconductor |
SIPMOS Power Transistor | |
6 | SPD30N03S2L |
INCHANGE |
N-Channel MOSFET | |
7 | SPD30N03S2L-07 |
Infineon Technologies |
Power-Transistor | |
8 | SPD30N03S2L-07G |
Infineon Technologies |
Power-Transistor | |
9 | SPD30N03S2L-10 |
Infineon Technologies |
Power-Transistor | |
10 | SPD30N03S2L-10G |
Infineon Technologies |
Power-Transistor | |
11 | SPD30N03S2L-20 |
Infineon Technologies |
Power-Transistor | |
12 | SPD30N03S2L-20G |
Infineon |
Power-Transistor |