SPD30N03S2L - INCHANGE

SPD30N03S2L N-Channel MOSFET

isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Superior thermal resistance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-S.

Features

·Static drain-source on-resistance: RDS(on)≤10mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Superior thermal resistance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt.