www.DataSheet4U.com SIPMOS® Power Transistor Features • N channel • SPD 30N03 30 30 V A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID Enhancement mode RDS(on) 0.015 Ω • Avalanche rated • dv/dt rated • 175˚C operating temperature Type SPD30N03 SPU30N03 Package P-TO252 Ordering Code Packaging .
• N channel
•
SPD 30N03
30 30 V A
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
Enhancement mode
RDS(on) 0.015 Ω
• Avalanche rated
• dv/dt rated
• 175˚C operating temperature
Type SPD30N03 SPU30N03
Package P-TO252
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
Q67040-S4144-A2 Tape and Reel
P-TO251-3-1 Q67040-S4146-A2 Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 250 12 6 kV/µs mJ Unit A
ID
TC = 25 ˚C, TC = 100 ˚C
1)
Pulsed drain current
IDpuls.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD30N03L |
Siemens Semiconductor |
SIPMOS Power Transistor | |
2 | SPD30N03S2L |
INCHANGE |
N-Channel MOSFET | |
3 | SPD30N03S2L-07 |
Infineon Technologies |
Power-Transistor | |
4 | SPD30N03S2L-07G |
Infineon Technologies |
Power-Transistor | |
5 | SPD30N03S2L-10 |
Infineon Technologies |
Power-Transistor | |
6 | SPD30N03S2L-10G |
Infineon Technologies |
Power-Transistor | |
7 | SPD30N03S2L-20 |
Infineon Technologies |
Power-Transistor | |
8 | SPD30N03S2L-20G |
Infineon |
Power-Transistor | |
9 | SPD30N06S2-15 |
Infineon Technologies |
OptiMOS Power-Transistor | |
10 | SPD30N06S2-23 |
Infineon Technologies |
OptiMOS Power-Transistor | |
11 | SPD30N06S2L-13 |
Infineon Technologies |
OptiMOS Power-Transistor | |
12 | SPD30N06S2L-23 |
Infineon Technologies |
OptiMOS Power-Transistor |