SPD30N03S2L-07G - Infineon Technologies

SPD30N03S2L-07G Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-f.ree lead plating; RoHS compliant SPD30N03S2L-07 G Product Summary VDS 30 V RDS(on) 6.7 ID 30 PG-TO252-3 mΩ A Type Package Mark.

Features

ermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol Values Unit min. typ. max. RthJC RthJA RthJA - 0.7 1.1 K/W - - 100 - - 75 - - 50 Electr. ical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS V(BR)DSS 30 - VGS(th) 1.2 1.6 -V 2 ID=85µA Zero gate voltage drain current.