SPD30N03S2L-10 - Infineon Technologies

SPD30N03S2L-10 Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package SPD30N03S2L-10G PG-TO252-3 Marking 2N03L10 Maximum Ratin.

Features

09-2008 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) SPD30N03S2L-10 G Symbol Values Unit min. typ. max. RthJC RthJA RthJA - 1 1.5 K/W - - 100 - - 75 - - 50 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V(BR)DSS 30 - -V VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2 I.