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SPD30N03S2L |
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| Part Number | SPD30N03S2L |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
| Features |
·Static drain-source on-resistance: RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Superior thermal resistance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt... |
| Document |
 SPD30N03S2L Data Sheet
PDF 238.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPD30N03S2L-07 |
Infineon Technologies |
Power-Transistor |
|
| 2 | SPD30N03S2L-07G |
Infineon Technologies |
Power-Transistor |
|
| 3 | SPD30N03S2L-10 |
Infineon Technologies |
Power-Transistor |
|
| 4 | SPD30N03S2L-10G |
Infineon Technologies |
Power-Transistor |
|
| 5 | SPD30N03S2L-20 |
Infineon Technologies |
Power-Transistor |
|