SPD08N50C3 - Infineon Technologies

SPD08N50C3 Power Transistor

SPD08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance , available in Halogen free mold comp.

Features

uls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value 7.6 4.6 22.8 230 0.5 7.6 ±20 ±30 83 -55... +150 15 Unit A mJ A V W °C V/ns a) non-Halogen free (OPN: SPD08N50C3BT), Halogen free (OPN: SPD08N50C3AT) Rev. 2.7 Page 1 2020-05-15 SPD08N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 7.6 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, reflow soldering, MSL3 1.6 mm (0.063 in.) from case for.