SPD08N05L - Infineon Technologies

SPD08N05L SIPMOS-R POWER TRANSISTOR

SPD 08N05L SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 8.4 V Ω A Enhancement mode Level • Avalanche rated www.DataSheet4U.com • Logic • dv/dt rated • 175˚C operating temperature Type SPD08N05L SPU08N05L Package P-TO252 P-TO251 O.

Features

• N channel
• Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 8.4 V Ω A Enhancement mode Level
• Avalanche rated www.DataSheet4U.com
• Logic
• dv/dt rated
• 175˚C operating temperature Type SPD08N05L SPU08N05L Package P-TO252 P-TO251 Ordering Code Q67040-S4134 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4182-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Continuous drain current Value 8.4 5.9 34 35 2.4 6 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current .