Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt Type SPD08N10 SPU08N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin .
• N channel
•
SPD 08N10
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS RDS(on) ID
100 0.3 8.4
V Ω A
Enhancement mode rated
• Avalanche rated
www.DataSheet4U.com
• dv/dt
Type SPD08N10 SPU08N10
Package P-TO252 P-TO251
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
Q67040-S4126-A2 Tape and Reel Q67040-S4118-A2 Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current
Value 8.4 5.4 33.6 30 4 6 ±20 40 -55... +175 55/150/56
Unit A
ID
TC = 25 ˚C TC = 100 ˚C
Pulsed drain current
IDp.
Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 08N10 Product Summary Drain source voltage Drain.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD08N05L |
Infineon Technologies |
SIPMOS-R POWER TRANSISTOR | |
2 | SPD08N50C3 |
Infineon Technologies |
Power Transistor | |
3 | SPD08N50C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPD0801 |
SSDI |
(SPD0801 - SPD1001) SCHOTTKY RECTIFIER | |
5 | SPD0801SMS |
SSDI |
(SPD0801SMS - SPD1001SMS) SCHOTTKY RECTIFER | |
6 | SPD0802 |
SSDI |
(SPD0802 - SPD1002) SCHOTTKY RECTIFIER | |
7 | SPD0802SMS |
SSDI |
(SPD0802SMS - SPD1002SMS) SCHOTTKY RECTIFIER | |
8 | SPD08P06P |
Infineon Technologies |
SIPMOS Power-Transistor | |
9 | SPD08P06PG |
Infineon |
Power-Transistor | |
10 | SPD005G |
Smartec |
(SPD Series) Smartec Pressure Sensor | |
11 | SPD01510KS |
SiPower |
Spandard Recovery Diodes | |
12 | SPD01520KS |
SiPower |
Spandard Recovery Diodes |