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SPD08N50C3 |
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| Part Number | SPD08N50C3 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | SPD08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A PG-... |
| Features |
uls EAS
EAR
IAR VGS VGS Ptot Tj , Tstg dv/dt
Value
7.6 4.6 22.8 230
0.5
7.6 ±20 ±30 83 -55... +150 15
Unit A
mJ
A V W °C V/ns
a) non-Halogen free (OPN: SPD08N50C3BT), Halogen free (OPN: SPD08N50C3AT)
Rev. 2.7
Page 1
2020-05-15
SPD08N50C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 400 V, ID = 7.6 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, reflow soldering, MSL3 1.6 mm (0.063 in.) from case for... |
| Document |
 SPD08N50C3 Data Sheet
PDF 457.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD08N50C3 |
INCHANGE |
N-Channel MOSFET |
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| 2 | SPD08N05L |
Infineon Technologies |
SIPMOS-R POWER TRANSISTOR |
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| 3 | SPD08N10 |
Infineon Technologies |
SIPMOS Power Transistor |
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| 4 | SPD08N10 |
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SIPMOS Power Transistor |
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| 5 | SPD0801 |
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(SPD0801 - SPD1001) SCHOTTKY RECTIFIER |
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