SPD08N50C3 |
Part Number | SPD08N50C3 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
Features |
·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.6 IDM Drain Current-Single Pulsed 22.8 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER R... |
Document |
SPD08N50C3 Data Sheet
PDF 240.07KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD08N50C3 |
Infineon Technologies |
Power Transistor | |
2 | SPD08N05L |
Infineon Technologies |
SIPMOS-R POWER TRANSISTOR | |
3 | SPD08N10 |
Infineon Technologies |
SIPMOS Power Transistor | |
4 | SPD08N10 |
Infineon Technologies |
SIPMOS Power Transistor | |
5 | SPD0801 |
SSDI |
(SPD0801 - SPD1001) SCHOTTKY RECTIFIER |