SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A · 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2.
Product Summary
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Drain source voltage
VDS
-60 V
W Drain-source on-state resistance RDS(on) 0.023
Continuous drain current
ID
-80 A
· 175°C operating temperature
° Pb-free lead plating: RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type SPB80P06P G
Package Lead free PG-TO263-3 Yes
Pin 1 PIN 2/4 PIN 3
G
D
S
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C, 1)
TC = 100 °C
Pulsed drain current TC = 25 .
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB80P06PG |
Infineon |
Power Transistor | |
2 | SPB80N03 |
Siemens Semiconductor Group |
SIPMOS Power Transistor | |
3 | SPB80N03L |
Siemens |
Power Transistor | |
4 | SPB80N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPB80N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPB80N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
7 | SPB80N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
8 | SPB80N03S2L-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
9 | SPB80N03S2L-04 |
Infineon Technologies |
Power-Transistor | |
10 | SPB80N03S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
11 | SPB80N03S2L-05 |
Infineon Technologies |
Power-Transistor | |
12 | SPB80N03S2L-06 |
Infineon Technologies |
OptiMOS Power-Transistor |