and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.DataSheet4U.com SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Paramet.
and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB80N03S2L-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
2 | SPB80N03S2L-04 |
Infineon Technologies |
Power-Transistor | |
3 | SPB80N03S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPB80N03S2L-05 |
Infineon Technologies |
Power-Transistor | |
5 | SPB80N03S2L-06 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPB80N03S2L-06 |
Infineon Technologies |
Power-Transistor | |
7 | SPB80N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
8 | SPB80N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
9 | SPB80N03 |
Siemens Semiconductor Group |
SIPMOS Power Transistor | |
10 | SPB80N03L |
Siemens |
Power Transistor | |
11 | SPB80N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
12 | SPB80N04S2-04 |
Infineon Technologies |
Power-Transistor |