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SPB80P06P |
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| Part Number | SPB80P06P |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variati... |
| Features |
·Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -80 PD Total Dissipation @TC=25℃ 340 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETE... |
| Document |
 SPB80P06P Data Sheet
PDF 249.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB80P06P |
Infineon Technologies |
Power Transistor |
|
| 2 | SPB80P06PG |
Infineon |
Power Transistor |
|
| 3 | SPB80N03 |
Siemens Semiconductor Group |
SIPMOS Power Transistor |
|
| 4 | SPB80N03L |
Siemens |
Power Transistor |
|
| 5 | SPB80N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|